Our patented SiMO (Silicon Metal Oxide) near-infrared photodetection technology is one of the future candidates for NIR photodetection at extremely low cost — targeting LiDAR, high-speed data communications and chip interconnects.
We are currently running a manufacturability study with our partners at the Centre for Process Innovation (CPI) in the UK — targeting TRL6 and demonstration of large-area manufacturability with very good yield.
Our aim is to integrate this technology into a variety of applications including LiDAR, high-speed data communications and chip interconnects. The unique selling points remain consistent across the portfolio: very low-cost silicon-based NIR detection (orders of magnitude below In(Ga)As), high efficiency with response times below 1 ps, very low dark current, and full CMOS compatibility.
Orders of magnitude lower than existing In(Ga)As solutions.
High-efficiency NIR photodetection with low response time.
Minimised noise for reliable detection.
Integrates directly into standard semiconductor processes.
Talk to us about SiMO, the CPI manufacturability programme, or an application-specific evaluation.
Get in touch today