A diverse, defensible portfolio — next-generation non-volatile memory, near-infrared photodetection and magnetic field sensing — each designed to slot into existing CMOS manufacturing and win on energy and cost.
A high-speed, two-terminal solid-state memory protected by 50+ granted patents. Sub-0.1 pJ/bit, non-destructive read, deterministic switching, stable to 150 °C, scalable to 6 nm.
Explore PMRAM →Silicon–metal-oxide near-infrared photodetection at 1000–1800 nm — a low-cost, fully CMOS-compatible alternative to expensive III-V / InGaAs detectors, with response times below 1 ps.
Explore SiMO →Bringing SiMO to LiDAR, high-speed data communication and chip interconnects — now in a manufacturability study with CPI (UK) toward TRL6 and large-area yield.
See applications →We rebuilt the PMRAM primitive from the patent as a live, in-browser teardown: the module, the crossbar array, one cell, the conditioning loop and the resulting distribution — every readout computed by a simulation the page runs, not typed.
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