PMRAM™ — Next-Generation Non-Volatile Memory

A brand-new memory, on a brand-new science.

Compared to traditional memory (e.g. DRAM) or emerging memory (e.g. MRAM), PMRAM delivers unmatched energy efficiency — the lowest-power technology that can scale to a mainstream memory solution — with high-temperature reliability, operating seamlessly up to 150 °C.

PMRAM is a two-terminal device that does not rely on Spin-Hall effects for spin-current generation — in fact it uses no spin current at all. It utilises full voltage (electric-field-controlled) switching with transient current shorts on the order of tens of picoseconds, rather than the steady current STT-MRAM or ReRAM require. The result is an extremely low-power device with deterministic — not stochastic — switching.

Where PMRAM separates from other emerging NVM.

Full voltage control <0.1 pJ/bit

Electric-field-controlled switching with transient current shorts (tens of ps). No steady current — extremely low power per bit.

Non-destructive read

Data reading is non-destructive — no need to refresh or re-write data after a read event.

Exceptional endurance >10¹³

Estimated beyond 10¹³ cycles, with a roadmap toward 10¹⁵; we measure 10⁸–10⁹ today. Close to infinite for most workloads.

Fast read / write 5 ns → <1 ns

5 ns measured, sub-nanosecond achievable in simulation.

Minimum device size 6 nm

Minimum bit size estimated by finite-element analysis to 6 nm — a pathway to high-density storage-class memory without anisotropy-driven heating.

Deterministic switching reliable

Deterministic rather than stochastic switching gives a more reliable, repeatable switching mechanism.

Dynamic range >3000%

Over 3000% measured routinely (20–50×); QM simulation of our structures indicates a theoretical ON/OFF ratio up to 10⁶.

CMOS BEOL compatible +3–4 masks

Fully compatible with standard CMOS back-end-of-line processes with low mask counts.

No Joule heating

Electric-field reliant with no Joule effects — a smaller cell than the best embedded SRAM (L2/L3).

PMRAM key figures.

Energy per bit

< 0.1 pJ/bit

Read / write speed

5 ns measured · < 1 ns simulated

Endurance

> 10¹³ cycles (target 10¹⁵)

Data retention

up to 10 years

Dynamic range

> 3000% measured

Minimum device size

6 nm (finite-element analysis)

Temperature range

up to 150 °C

Process

CMOS BEOL, +3–4 masks · 2-terminal

Scalability

down to 16–20 nm nodes · 3D multibit capable

Intellectual property

50+ granted patents worldwide

High-speed embeddable PMRAM.

Fully customisable, targeted at replacing eFLASH or SRAM in automotive, IoT, display, medical and consumer electronics. We are already increasing capacity toward standalone GPU/CPU, mobile, data-centre, machine-learning and in-memory-computing markets. We invite early adopters with memory requirements up to 128 Mb to get in touch.

PMRAM™ — next-generation non-volatile memory.

A brand-new memory, on a brand-new science.

Where PMRAM separates from other emerging NVM.

PMRAM key figures.

High-speed embeddable PMRAM.

Interested in low-power embedded memory?